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| FDS4410A Single N-Channel, Logic-Level, PowerTrench(R) MOSFET May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench(R) MOSFET Features 10 A, 30 V. RDS(ON) = 13.5 m @ VGS = 10 V RDS(ON) = 20 m @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D D D D 5 6 4 3 2 1 SO-8 Pin 1 S S S G 7 8 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 20 10 50 2.5 1.0 -55 to +150 Units V V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) Thermal Resistance, Junction-to-Case (Note 1) 50 125 25 Package Marking and Ordering Information Device Marking FDS4410A Device FDS4410A Reel Size 13" Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS4410A Rev. B FDS4410A Single N-Channel, Logic-Level, PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55C Gate-Body Leakage VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9 A VGS = 10 V, ID = 10 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 10 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 50 48 1 1.9 -5 9.8 12.0 13.7 13.5 20 23 On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 3 V mV/C m 30 25 1 10 100 nA V mV/C A Parameter Test Conditions Min Typ Max Units ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Notes: On-State Drain Current Forward Transconductance A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 1205 290 115 2.4 pF pF pF 19 10 44 19 16 ns ns ns ns nC nC nC Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 10 A, VGS = 5 V 9 5 28 9 12 3.4 4.0 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.1 A IF = 10A, diF/dt = 100 A/s (Note 2) 0.74 24 27 2.1 1.2 A V nS nC 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 FDS4410A Rev. B www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench(R) MOSFET Typical Characteristics 50 3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.0V VGS = 3.0V 2.5 40 I D, DRAIN CURRENT (A) 6.0V 30 4.5V 3.5.V 2 3.5V 1.5 4.0V 4.5V 1 6.0V 10V 20 10 3.0V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 10A VGS = 10V ID = 5 A RDS(ON), ON-RESISTANCE (OHM) 0.04 0.03 T A = 125 C 0.02 o TA = 25 C 0.01 o 0 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS , REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 25 C o 30 20 TA = 125oC 10 25oC -55oC -55oC 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 4 0.0001 0 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDS4410A Rev. B www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench(R) MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10 A 8 CAPACITANCE (pF) 20V 6 VDS = 10V 15V 1200 1600 f = 1MHz VGS = 0 V Ciss 800 4 Coss 400 2 Crss 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 100s ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE R JA = 125 oC/W TA = 25 C 0.01 0.01 o 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 20 0.1 10 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA (t) = r(t) * R JA RJA = 125C/W P(pk) t1 t2 SINGLE PULSE 0.01 T J - T A = P * RJA (t) Duty Cycle, D = t 1 /t 2 0.001 0.0001 0.001 0.01 0.1 t1 , TIM E (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the cir cuit board design. 4 FDS4410A Rev. B www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDS4410A Rev. B www.fairchildsemi.com |
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